The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts

Author

• F M. Ross, IBM Corp.
• C Y. Wen, Purdue University - Main Campus
• S Kodambaka, University of California - Los Angeles
• B A. Wacaser, IBM Corp.
• M C. Reuter, IBM Corp.
• E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue UniversityFollow

Abstract

We discuss the benefits of using metals other than Au to catalyze the growth of Si and Ge nanowires, emphasizing the opportunities that these non-conventional materials provide for tailoring electronic and structural nanowire properties. However, since these metals are more reactive than Au, their use creates constraints on wire growth conditions as well as difficulties in post-growth characterization. These issues are illustrated for Si and Si/Ge nanowires grown from Al, Cu and AuAl starting materials. The vacuum requirements for the deposition of the reactive metals are discussed as well as the effect of atmospheric exposure on the structure of wires observed post-growth with electron microscopy.

Keywords

in situ electron microscopy; self-assembly; nanostructured semiconductor; nanowire

DOI

10.1080/14786431003745583

Citation

F.M. Ross , C.-Y. Wen , S. Kodambaka , B.A. Wacaser , M.C. Reuter & E.A. Stach. The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts. Philosophical Magazine. Volume 90, 2010. Issue 20

Date of this Version

2010

Recommended Citation

Ross, F M.; Wen, C Y.; Kodambaka, S; Wacaser, B A.; Reuter, M C.; and Stach, E A., "The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts" (2010). Birck and NCN Publications. Paper 658.
http://dx.doi.org/10.1080/14786431003745583