Abstract
Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n-channel inversion-mode metal-oxide-semiconductor field-effect transistor (MOSFET). By analyzing the charge pumped under gate voltage pulses of different rise and fall times, the interface trap density was extracted across the band gap of In0.75Ga0.25As. The interface trap density was found to be 4x10(12) cm(-2) eV(-1) near the conduction band and to peak at 3x10(13) cm(-2) eV(-1) mid-gap. The result helps explain the promising on-state performance of the Al2O3/In0.75Ga0.25As MOSFET and the need to further improve the interface so that its off-state performance can be on par with that of the Si MOSFET.
Keywords
alumina; conduction bands; energy gap; gallium arsenide; III-V semiconductors; indium compounds; interface states; MOSFET; semiconductor-insulator boundaries
Citation
DOI: 10.1063/1.3315870
Date of this Version
2-2010
Recommended Citation
Wang, W; Deng, J.; Hwang, JC M.; Xuan, Y; and Ye, P. D., "Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors" (2010). Birck and NCN Publications. Paper 648.
https://docs.lib.purdue.edu/nanopub/648