Abstract
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.
Keywords
field effect transistors; graphene, EPITAXIAL GRAPHENE
Citation
DOI: 10.1063/1.3459136
Date of this Version
6-2010
Recommended Citation
Tian, J F.; Jauregui, L A.; Lopez, G; Cao, H; and Chen, Yong P., "Ambipolar graphene field effect transistors by local metal side gates" (2010). Birck and NCN Publications. Paper 646.
https://docs.lib.purdue.edu/nanopub/646