Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results
Date of this Version
1-2010Citation
Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results. Adina Scott, Chad Risko, Nicholas Valley, Mark A. Ratner, and David B. Janes Journal of Applied Physics 107, 024505 (2010); doi: http://dx.doi.org/10.1063/1.3251466
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Abstract
There is considerable current interest in using molecular materials to influence the surface potential of semiconductor devices for nanoelectronic and sensing applications. We present experimental capacitance-voltage results showing that systematic Schottky barrier height modulation can be achieved using dipolar molecular layers in gold-molecule-silicon devices. A computational methodology that combines quantum chemistry and traditional electrostatic calculations is used to explore various physical effects that can influence barrier heights in such systems. Nonidealities such as silicon surface states can influence both the potential profile within the device and the validity of the extracted barrier height. Our devices exhibit low surface state densities, but the magnitude of surface potential modulation is modest due to molecular depolarization from the gold contact.
Discipline(s)
Engineering | Nanoscience and Nanotechnology
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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics 107, 024505 (2010); and may be found at http://dx.doi.org/10.1063/1.3251466. The following article has been submitted to/accepted by Journal of Applied Physics. Copyright (2010) Adina Scott, Chad Risko, Nicholas Valley, Mark A. Ratner, and David B. Janes. This article is distributed under a Creative Commons Attribution 3.0 Unported License.