DC modeling and the source of flicker noise in passivated carbon nanotube transistors

Author

• Sunkook Kim, Purdue University - Main CampusFollow
• Seongmin Kim, Birck Nanotechnology Center, Network for Computational Nanotechnology, Purdue UniversityFollow
• David B. Janes, Purdue UniversityFollow
• Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue UniversityFollow
• Juhee Back, University of Illinois at Urbana-Champaign
• Moonsub Shim, University of Illinois at Urbana-Champaign

Abstract

DC and intrinsic low-frequency noise properties of p-channel depletion-mode carbon nanotube field effect transistors (CNT-FETs) are investigated. To characterize the intrinsic noise properties, a thin atomic layer deposited (ALD) HfO2 gate dielectric is used as a passivation layer to isolate CNT-FETs from environmental factors. The ALD HfO2 gate dielectric in these high-performance top-gated devices is instrumental in attaining hysteresis-free current-voltage characteristics and minimizes low-frequency noise. Under small drain-source voltage, the carriers in the CNT channel are modulated by the gate electrode and the intrinsic 1/f noise is found to be correlated with charge trapping/detrapping from the oxide substrate as expected. When thermionic emission is the dominant carrier transport mechanism in CNT-FETs under large drain-source voltages, the excess 1/f noise is attributed to the noise stemming from metal-CNT Schottky barrier contacts as revealed by the measurements.

Keywords

FIELD-EFFECT TRANSISTORS; LOW-FREQUENCY NOISE; SCHOTTKY-BARRIER DIODES; 1/F NOISE; DIELECTRICS; DEVICES

DOI

10.1088/0957-4484/21/38/385203

Citation

Nanotechnology, Volume 21, Number 38

Date of this Version

9-2010

Recommended Citation

Kim, Sunkook; Kim, Seongmin; Janes, David B.; Mohammadi, Saeed; Back, Juhee; and Shim, Moonsub, "DC modeling and the source of flicker noise in passivated carbon nanotube transistors" (2010). Birck and NCN Publications. Paper 638.
http://dx.doi.org/10.1088/0957-4484/21/38/385203