An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming
Abstract
A configurable integration technology suitable for implementing application specific radio-frequency (RF) and microwave circuits is presented. This postfabrication integration scheme is compatible with complementary metal-oxide-semiconductor (CMOS) technology and utilizes room temperature deposited Parylene-N as low loss and low permittivity dielectric material. Interconnect lines, inductors, and transmission lines fabricated on top of arrays of prefabricated 0.13 mu m and 90 nm CMOS transistors coated with Parylene-N are configured to design interconnect programmable RF and microwave circuits. The technology is used to demonstrate three proof of concept interconnect programmable narrowband amplifiers. These amplifiers have center frequencies of 5.5, 6.4, and 18 GHz with forward gain S-21 of 16.6, 11, and 18.7 dB, respectively. Fabrication simplicity and programmable nature of this technology compared to standard application specific integrated circuit (ASIC) fabrication lowers the cost and time to market of individual ASIC chip.
Keywords
Coplanar waveguide (CPW) transmission line; inductor; interconnect; low-k dielectric material; narrowband amplifiers; Parylene-N; programmable circuits; radio frequency (RF)
DOI
10.1109/TADVP.2009.2038234
Citation
IEEE Transactions on Advanced Packaging (Volume: 33, Issue: 2, May 2010)
Date of this Version
5-2010
Recommended Citation
Rabieirad, Laleh; Martinez, Edgar J.; and Mohammadi, Saeed, "An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming" (2010). Birck and NCN Publications. Paper 635.
http://dx.doi.org/10.1109/TADVP.2009.2038234