0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

Author

• Y Q. Wu, Purdue University - Main Campus
• W K. Wang, Lehigh University
• Ozhan Koybasi, Purdue University - Main CampusFollow
• Dmitri Zakharov, Purdue University - Main CampusFollow
• E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue UniversityFollow
• S Nakahara, Lehigh University
• J C. Hwang, Lehigh University
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 mu A/mu m and transconductances of 538-705 mu S/mu m. The 100-nm device has a drain current of 801 mu A/mu m and a transconductance of 940 mu S/mu m. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.

Keywords

HIGH-PERFORMANCE; INGAAS MOSFET; GATE STACK; ENHANCEMENT; CHANNEL; TRANSISTOR; MOBILITY; HFALO

Date of this Version

7-2009

Recommended Citation

Wu, Y Q.; Wang, W K.; Koybasi, Ozhan; Zakharov, Dmitri; Stach, E A.; Nakahara, S; Hwang, J C.; and Ye, P. D., "0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET" (2009). Birck and NCN Publications. Paper 562.
https://docs.lib.purdue.edu/nanopub/562