On Backscattering and Mobility in Nanoscale Silicon MOSFETs

Author

• Changwook Jeong, Electrical and Computer Engineering, Purdue UniversityFollow
• Dimitri Antoniadis, Massachusetts Institute of Technology
• Mark S. Lundstrom, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

The dc current-voltage characteristics of an n-channel silicon MOSFET with an effective gate length of about 60 nm are analyzed and interpreted in terms of scattering theory. The experimental results are found to be consistent with the predictions of scattering theory-the drain current is closer to the ballistic limit under high drain bias than under low drain bias, and the ON-current in strong inversion is limited by a small portion of the channel near the source. The question of how the low- and high-V-DS drain currents are related to the near-equilibrium, long-channel mobility is also addressed. In the process of this analysis, theoretical and experimental uncertainties that make it difficult to extract numerically precise values of the scattering parameters are identified.

Keywords

QUASI-BALLISTIC TRANSPORT; FIELD-EFFECT TRANSISTOR; CHANNEL BACKSCATTERING; PART I; COEFFICIENT EXTRACTION; CARRIER BACKSCATTERING; ELECTRON-MOBILITY; NANO-MOSFETS; SI MOSFETS; N-MOSFETS

Date of this Version

11-2009

Recommended Citation

Jeong, Changwook; Antoniadis, Dimitri; and Lundstrom, Mark S., "On Backscattering and Mobility in Nanoscale Silicon MOSFETs" (2009). Birck and NCN Publications. Paper 559.
https://docs.lib.purdue.edu/nanopub/559