Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits
Abstract
A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mu m) dielectric layer that enables very low loss lines (similar to 0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time.
Keywords
Amplifiers; coplanar waveguide (CPW); gain-bandwidth product; mask programmable technology; Parylene-N; Si CMOS; transmission line; wideband circuits, POWER-AMPLIFIER; DISTRIBUTED-AMPLIFIERS; 0.18-MU-M CMOS; FRONT-END; RECEIVER; TECHNOLOGY; OUTPUT; MMICS; GAIN
Date of this Version
6-2009
Recommended Citation
Rabieirad, Laleh; Martinez, Edgar J.; and Mohammadi, Saeed, "Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits" (2009). Birck and NCN Publications. Paper 558.
https://docs.lib.purdue.edu/nanopub/558