Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Author

• T Shen, Purdue University - Main Campus
• J J. Gu, Purdue University - Main Campus
• M Xu, Purdue University - Main Campus
• Michael Bolen, Purdue UniversityFollow
• Michael A. Capano, Birck Nanotechnology Center, Purdue UniversityFollow
• L Engel, Natl High Magnet Field Lab
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001).

Keywords

MOBILITY

Citation

DOI: 10.1063/1.3254329

Date of this Version

10-26-2009

Recommended Citation

Shen, T; Gu, J J.; Xu, M; Bolen, Michael; Capano, Michael A.; Engel, L; and Ye, P. D., "Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)" (2009). Birck and NCN Publications. Paper 556.
https://docs.lib.purdue.edu/nanopub/556