Power Handling Capability of High-Q Evanescent-mode RF MEMS Resonators with Flexible Diaphragm

Author

• Xiaoguang Liu, Purdue University - Main CampusFollow
• Linda Katehi, School of Electrical and Computer Engineering, Purdue UniversityFollow
• William J. Chappell, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue UniversityFollow
• Dimitrios Peroulis, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

In this paper, we present theoretical and experimental investigations into the power handling capability of high-Q evanescent-mode RF MEMS tunable resonators based on electrostatically-actuated thin diaphragm tuner. The "self-biasing" of the diaphragm tuner from RF signal has been found to cause non-linear effects such as resonant frequency drift, frequency response distortion and instability. A non-linear circuit model has been proposed to predict such non-linearities and provide design guidelines for high power applications. Large signal measurement on a high-Q evanescent-mode resonator with no DC biasing shows good agreement with theoretical predictions.

Keywords

non-linearity; evanescent-mode cavity; MEMS; quality factor; tunable resonator; self-biasing

Date of this Version

2009

Recommended Citation

Liu, Xiaoguang; Katehi, Linda; Chappell, William J.; and Peroulis, Dimitrios, "Power Handling Capability of High-Q Evanescent-mode RF MEMS Resonators with Flexible Diaphragm" (2009). Birck and NCN Publications. Paper 553.
https://docs.lib.purdue.edu/nanopub/553