Note: Thermal analog to atomic force microscopy force-displacement measurements for nanoscale interfacial contact resistance

Brian D. Iverson, Sandia National Laboratories; School of Mechanical Engineering, Purdue University; Birck Nanotechnology Center, Purdue University
John E. Blendell, School of Mechanical Engineering, Purdue University; Birck Nanotechnology Center
Suresh Garimella, School of Mechanical Engineering, Purdue University; Birck Nanotechnology Center, Purdue University

Date of this Version

3-31-2010

Citation

10.1063/1.3361157

This document has been peer-reviewed.

 

Abstract

Thermal diffusion measurements on polymethylmethacrylate-coated Si substrates using heated atomic force microscopy tips were performed to determine the contact resistance between an organic thin film and Si. The measurement methodology presented demonstrates how the thermal contrast signal obtained during a force-displacement ramp is used to quantify the resistance to heat transfer through an internal interface. The results also delineate the interrogation thickness beyond which thermal diffusion in the organic thin film is not affected appreciably by the underlying substrate.

 

Share