Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires
Abstract
We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor-metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications.
Keywords
/SIGE SUPERLATTICE NANOWIRES; HETEROSTRUCTURE NANOWIRES; GE NANOWIRES; GROWTH; SI; TEMPERATURE; CATALYST; SYSTEM
Date of this Version
11-27-2009
Recommended Citation
Wen, C Y.; Reuter, M C.; Bruley, J; Tersoff, J; Kodambaka, S; Stach, E A.; and Ross, F M., "Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires" (2009). Birck and NCN Publications. Paper 475.
https://docs.lib.purdue.edu/nanopub/475