Vertical Carbon Nanotube Devices With Nanoscale Lengths Controlled Without Lithography

Author

• Aaron D. Franklin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• Robert A. Sayer, Birck Nanotechnology Center and School of Mechanical Engineering, Purdue UniversityFollow
• Timothy D. Sands, Purdue UniversityFollow
• David B. Janes, Purdue UniversityFollow
• Timothy Fisher, Birck Nanotechnology Center and School of Mechanical Engineering, Purdue UniversityFollow

Abstract

Vertical single-walled carbon nanotubes (vSWCNTs) are synthesized within highly ordered porous anodic alumina (PAA) templates supported on Si substrates. A process for obtaining thin-film PAA with long-range ordered nanopores is presented in this paper. Each nanopore contains at most one v-SWCNT that is supported by a dielectric and addressed by electrochemically formed Pd nanowire source contacts and evaporated Pd drain contacts. Characteristics of these completely vertical, two-terminal nanotube devices are presented. Control of the v-SWCNT length is demonstrated using a straightforward etching process with lengths of less than 100 nm achieved without the need for complex/expensive lithography. This effective nanoscale length control of highly ordered v-SWCNTs provides a practical basis for the realization of CNT-based nanoelectronics.

Keywords

Carbon nanotubes (CNTs); length scaling; nanotechnology; porous anodic alumina (PAA); vertical devices, FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE ELECTRONICS; ALIGNED ARRAYS; FABRICATION; TEMPLATES; CONTACTS; FETS

Date of this Version

7-2009

Recommended Citation

Franklin, Aaron D.; Sayer, Robert A.; Sands, Timothy D.; Janes, David B.; and Fisher, Timothy, "Vertical Carbon Nanotube Devices With Nanoscale Lengths Controlled Without Lithography" (2009). Birck and NCN Publications. Paper 442.
https://docs.lib.purdue.edu/nanopub/442