Localized heating on silicon field effect transistors: Device fabrication and temperature measurements in fluid
Abstract
We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.
Keywords
INTERFERENCE-CONTRAST MICROSCOPY; POLYMERASE-CHAIN-REACTION; MICROFLUIDIC SYSTEMS; DNA AMPLIFICATION; MICROWAVE; PCR; NANOWIRES; DYE
Date of this Version
2009
Recommended Citation
Elibol, Oguz H.; Reddy, Jr., Bobby; Nair, Pradeep R.; Dorvel, Brian; Butler, Felice; Ahsan, Zahab S.; Bergstrom, Donald E.; Alam, Muhammad A.; and Bashir, Rashid, "Localized heating on silicon field effect transistors: Device fabrication and temperature measurements in fluid" (2009). Birck and NCN Publications. Paper 411.
https://docs.lib.purdue.edu/nanopub/411