Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides

Author

• N. Z. Butt, School of Electrical and Computer EngineeringFollow
• A. M. Chang, Department of Physics, Purdue University; Department of Physics, Duke UniversityFollow
• H. Raza, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• Rashid Bashir, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• J. Liu, Electrical and Computer Engineering, University of Texas at Austin
• D. L. Kwong, Electrical and Computer Engineering, University of Texas at Austin

Abstract

We have investigated the statistics of low-frequency noise in the tunneling current of ultrathin oxides

Citation

Applied Physics Letters 88, 112901 (2006); DOI: 10.1063/1.2186114

Date of this Version

January 2006

Recommended Citation

Butt, N. Z.; Chang, A. M.; Raza, H.; Bashir, Rashid; Liu, J.; and Kwong, D. L., "Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides" (2006). Birck and NCN Publications. Paper 41.
https://docs.lib.purdue.edu/nanopub/41