Abstract
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) is demonstrated on a n-doped GaAs channel with atomic-layer deposited Al2O3 as the gate oxide. The 10 mu m gate length transistor has a maximum drain current of 88 mA/mm and a transconductance of 19 mS/mm. The surface mobility estimated from the accumulation drain current has a peak value of similar to 500 cm(2)/Vs, which is comparable with those from previously reported depletion-mode GaAs MOSFETs epitaxially grown on semi-insulating GaAs substrates.
Keywords
alumina; atomic layer deposition; dislocations; gallium arsenide; III-V semiconductors; MOCVD coatings; MOSFET; semiconductor epitaxial layers; semiconductor-insulator boundaries; surface conductivity
Citation
APPLIED PHYSICS LETTERS 93, 242106 (2008)
Date of this Version
12-15-2008
Recommended Citation
Wu, Y Q.; Xu, M; Ye, P. D.; Cheng, Z; Li, J; Park, J; Hydrick, J; Bai, J; Carroll, M; Fiorenza, J G.; and Lochtefeld, A, "Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique" (2008). Birck and NCN Publications. Paper 395.
https://docs.lib.purdue.edu/nanopub/395