Abstract
Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors.
Keywords
biosensors; electric admittance; electrostatics; elemental semiconductors; field effect transistors; gallium arsenide; III-V semiconductors; passivation; silicon
Citation
JOURNAL OF APPLIED PHYSICS 105, 102046 (2009)
Date of this Version
5-15-2009
Recommended Citation
Lee, Kangho; Nair, Pradeep R.; Scott, Adina; Alam, Muhammad A.; and Janes, David B., "Device considerations for development of conductance-based biosensors" (2009). Birck and NCN Publications. Paper 389.
https://docs.lib.purdue.edu/nanopub/389