Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics

Author

• Xu M, Purdue University - Main Campus
• Y Q. Wu, Purdue University - Main Campus
• O Koybasi, Purdue University - Main CampusFollow
• T Shen, Purdue University - Main Campus
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

GaAs inversion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectrics are fabricated on (111)A and (100) surfaces. With the same channel length of 0.75 mu m, the maximum drain current of 15 mA/mm on n-channel MOSFET is obtained on (111)A surface, in great contrast to only 1 mu A/mm on (100) surface. For p-channel MOSFETs, maximum drain currents of 0.17 mA/mm and 0.8 mA/mm are obtained on (111)A and (100) surfaces, respectively. An empirical model is proposed to correlate the experimental observation with the existing III-V MOS theories.

Keywords

alumina; atomic layer deposition; gallium arsenide; III-V semiconductors; MOSFET; semiconductor device models

Citation

APPLIED PHYSICS LETTERS 94, 212104 (2009)

Date of this Version

5-25-2009

Recommended Citation

M, Xu; Wu, Y Q.; Koybasi, O; Shen, T; and Ye, P. D., "Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics" (2009). Birck and NCN Publications. Paper 387.
https://docs.lib.purdue.edu/nanopub/387