Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
Abstract
Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current-voltage (I-V) measurements, with some also measured as a function of temperature. Devices display either a characteristic single-barrier height or atypical dual-barrier heights. Device yields are shown to decrease as device area increases. Molten KOH etching is used to highlight defects for analysis by optical microscopy and atomic force microscopy. The I-V characteristics are compared against the defect density. A positive correlation between effective barrier height and effective electrically active area of the SBDs is found. No correlation is found between threading dislocations and ideality factor or barrier height.
Keywords
Silicon carbide; Schottky barrier diode; barrier height; threading dislocations; crystal defects
Date of this Version
4-2009
Recommended Citation
Bolen, M L. and Capano, Michael A., "Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes" (2009). Birck and NCN Publications. Paper 378.
https://docs.lib.purdue.edu/nanopub/378