Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition
Date of this Version9-29-2006
This document has been peer-reviewed.
TiN / GaN metal/semiconductor multilayers were grown by reactive pulsed laser deposition in an ammonia ambient on sapphire and MgO substrates for potential application in solid-state thermionic direct energy conversion devices. Crystallographic analysis of the multilayers by high-resolution x-ray diffraction and cross-sectional transmission electron microscopy revealed that, despite the difference in the crystal structures of rocksalt TiN and wurtzite GaN, it is possible to grow thick