Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition

Author

• Vijay Rawat, Birck Nanotechnology Center, School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue UniversityFollow
• Timothy D. Sands, Birck Nanotechnology Center, School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

TiN / GaN metal/semiconductor multilayers were grown by reactive pulsed laser deposition in an ammonia ambient on sapphire and MgO substrates for potential application in solid-state thermionic direct energy conversion devices. Crystallographic analysis of the multilayers by high-resolution x-ray diffraction and cross-sectional transmission electron microscopy revealed that, despite the difference in the crystal structures of rocksalt TiN and wurtzite GaN, it is possible to grow thick

Comments

DOI: 10.1063/1.2337784

Date of this Version

9-29-2006

Recommended Citation

Rawat, Vijay and Sands, Timothy D., "Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition" (2006). Birck and NCN Publications. Paper 33.
https://docs.lib.purdue.edu/nanopub/33