Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric
Date of this Version
June 2006Citation
Applied Physics Letters 88, 263518 (2006)
This document has been peer-reviewed.
Abstract
Atomic layer deposition
Comments
DOI: 10.1063/1.2217258