Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric

Author

• Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University,
• H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• G. D. Wilk, ASM America

Abstract

Atomic layer deposition

Comments

DOI: 10.1063/1.2217258

Citation

Applied Physics Letters 88, 263518 (2006)

Date of this Version

June 2006

Recommended Citation

Xuan, Y.; Lin, H. C.; Ye, P. D.; and Wilk, G. D., "Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric" (2006). Birck and NCN Publications. Paper 31.
https://docs.lib.purdue.edu/nanopub/31