High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

Author

• H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
• G. Lu, Department of Chemistry and the Materials Research Center, Northwestern University
• A. Facchetti, Department of Chemistry and the Materials Research Center, Northwestern University
• T. J. Marks, Department of Chemistry and the Materials Research Center, Northwestern University

Abstract

High-performance GaAs metal-insulator-semiconductor field-effect-transistors

Comments

DOI: 10.1063/1.2358202

Citation

Applied Physics Letters 89, 142101 (2006)

Date of this Version

October 2006

Recommended Citation

Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; and Marks, T. J., "High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics" (2006). Birck and NCN Publications. Paper 30.
https://docs.lib.purdue.edu/nanopub/30