Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited A12O3 gate dielectric

Author

• Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
• G. D. Wilk, ASM America

Abstract

Atomic layer deposition

Comments

DOI: 10.1063/1.2357566

Citation

Applied Physics Letters 89, 132103 (2006)

Date of this Version

October 2006

Recommended Citation

Xuan, Y.; Ye, P. D.; Lin, H. C.; and Wilk, G. D., "Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited A12O3 gate dielectric" (2006). Birck and NCN Publications. Paper 29.
https://docs.lib.purdue.edu/nanopub/29