Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited A12O3 gate dielectric

Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
G. D. Wilk, ASM America

Date of this Version

October 2006

Citation

Applied Physics Letters 89, 132103 (2006)

This document has been peer-reviewed.

 

Comments

DOI: 10.1063/1.2357566

Abstract

Atomic layer deposition

 

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