Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Author

• Sanghyun Ju, School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing,Follow
• Kang-Ho Lee, School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing,Follow
• David B. Janes, School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing,Follow
• Ramesh C. Dwivedi, NASA/Center for Applied Radiation Research (CARR), and Department of Electrical Engineering,
• Habibah Baffour-Awuah, NASA/Center for Applied Radiation Research (CARR), and Department of Electrical Engineering,
• R. Wilkins, NASA/Center for Applied Radiation Research (CARR), and Department of Electrical Engineering,
• Myung-Han Yoon, Department of Chemistry, and the Materials Research Center, and the Institute for Nanoelectronics
• Antonio Facchetti, Department of Chemistry, and the Materials Research Center, and the Institute for Nanoelectronics
• Tobin J. Mark, Department of Chemistry, and the Materials Research Center, and the Institute for Nanoelectronics

Abstract

In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors NW-FETs fabricated with a self-assembled superlattice SAS gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad Si . The threshold voltage Vth of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, Vth parameters of the SiO2-based ZnO NW-FETs display average shifts of −4.0 and −10.9 V for 5.71 and 285 krad Si H+ irradiation, respectively. In addition, little change is observed in the subthreshold characteristics off current, subthreshold slope of the SAS-based ZnO NW-FETs following H+ irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

Citation

DOI: 10.1063/1.2336744

Date of this Version

August 2006

Recommended Citation

Ju, Sanghyun; Lee, Kang-Ho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung-Han; Facchetti, Antonio; and Mark, Tobin J., "Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics" (2006). Birck and NCN Publications. Paper 269.
https://docs.lib.purdue.edu/nanopub/269