On-State Characteristics of SiC Power UMOSFETs on 115- m Drift Layers

Y. SUI, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University
T. Tsuji, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University
J. A. Cooper Jr., School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University

Abstract

We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115- m-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm2 and specific on-resistance of 228m cm2 are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.