Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric

Author

• T Yang, Purdue University
• Y Xuan, Purdue University
• Dmitry Zemlyanov, Purdue UniversityFollow
• T Shen, Purdue University
• Y Q. Wu, Purdue University
• Jerry M. Woodall, Birck Nanotechnology Center, Purdue UniversityFollow
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• F S. Aguirre-Tostado, Materials Science and Engineering, University of Texas at DallasFollow
• M Milojevic, Materials Science and Engineering, University of Texas at Dallas
• S McDonnell, Materials Science and Engineering, University of Texas at Dallas
• R M. Wallace, Materials Science and Engineering, University of Texas at Dallas

Abstract

A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dispersion on n-type GaAs than p-type GaAs is discussed. Further experiments show that the observed hysteresis is mainly from the mobile changes and traps induced by HfO2 in bulk oxide instead of those at oxide/GaAs interface.

Citation

APPLIED PHYSICS LETTERS 91, 142122
2007

Date of this Version

October 2007

Recommended Citation

Yang, T; Xuan, Y; Zemlyanov, Dmitry; Shen, T; Wu, Y Q.; Woodall, Jerry M.; Ye, P. D.; Aguirre-Tostado, F S.; Milojevic, M; McDonnell, S; and Wallace, R M., "Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric" (2007). Birck and NCN Publications. Paper 235.
https://docs.lib.purdue.edu/nanopub/235