Abstract
Nonvolatile memory device using indium selenide nanowire as programmable resistive element was fabricated and its resistive switching property was studied as functions of electrical pulse width and voltage magnitude. The nanowire memory can be repeatedly switched between high-resistance (similar to 10(11) Omega) and low-resistance (similar to 6x10(5) Omega) states which are attributed to amorphous and crystalline states, respectively. Once set to a specific state, the nanowire resistance is stable as measured at voltages up to 2 V. This observation suggests that the nanowire can be programed into two distinct states with a large on-off resistance ratio of similar to 10(5) with significant potential for nonvolatile information storage.
Citation
APPLIED PHYSICS LETTERS 91, 133119 2007
Date of this Version
September 2007
Recommended Citation
Yu, Bin; Ju, Sanghyun; Sun, Xuhui; Ng, Garrick; Nguyen, Thuc D.; Meyyappan, M; and Janes, David B., "Indium selenide nanowire phase-change memory" (2007). Birck and NCN Publications. Paper 233.
https://docs.lib.purdue.edu/nanopub/233