Abstract
Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.
Citation
APPLIED PHYSICS LETTERS 91, 033508 2007
Date of this Version
July 2007
Recommended Citation
Scott, Adina; Janes, David B.; Risko, Chad; and Ratner, Mark A., "Fabrication and characterization of metal-molecule-silicon devices" (2007). Birck and NCN Publications. Paper 232.
https://docs.lib.purdue.edu/nanopub/232