Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes

Author

• Woong-Ki Hong, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Dae-Kue Hwang, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Il-Kyu Park, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Gunho Jo, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Sunghoon Song, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Seong-Ju Park, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Takhee Lee, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
• Bong Joong Kim, Purdue University - Main CampusFollow
• E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue UniversityFollow

Abstract

The authors demonstrate the highly reproducible fabrication of n-channel depletion-mode (D-mode) and enhancement-mode (E-mode) field effect transistors (FETs) created from ZnO nanowires (NWs). ZnO NWs were grown by the vapor transport method on two different types of substrates. It was determined that the FETs created from ZnO NWs grown on an Au-coated sapphire substrate exhibited an n-channel D mode, whereas the FETs of ZnO NWs grown on an Au-catalyst-free ZnO film exhibited an n-channel E mode. This controlled fabrication of the two operation modes of ZnO NW-FETs is important for the wide application of NW-FETs in logic circuits.

Citation

APPLIED PHYSICS LETTERS 90, 243103
2007

Date of this Version

June 2007

Recommended Citation

Hong, Woong-Ki; Hwang, Dae-Kue; Park, Il-Kyu; Jo, Gunho; Song, Sunghoon; Park, Seong-Ju; Lee, Takhee; Kim, Bong Joong ; and Stach, E A., "Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes" (2007). Birck and NCN Publications. Paper 230.
https://docs.lib.purdue.edu/nanopub/230