Self-consistent simulation of quantum transport and magnetization dynamics in spin-torque based devices
Abstract
This letter presents a self-consistent solution of quantum transport, using the nonequilibrium Green’s function method, and magnetization dynamics, using the Landau-Lifshitz-Gilbert formulation. This model is applied to study “spin-torque” induced magnetic switching in a device where the transport is ballistic and the free magnetic layer is sandwiched between two antiparallel AP ferromagnetic contacts. A hysteretic current-voltage characteristic is predicted at room temperature, with a sharp transition between the bistable states that can be used as a nonvolatile memory. It is further shown that this AP pentalayer device may allow significant reduction in the switching current, thus facilitating integration of nanomagnets with electronic devices.
Date of this Version
10-11-2006
Recommended Citation
Salahuddin, Sayeef and Datta, Supriyo, "Self-consistent simulation of quantum transport and magnetization dynamics in spin-torque based devices" (2006). Birck and NCN Publications. Paper 191.
https://docs.lib.purdue.edu/nanopub/191