Impact of short-range scattering on the metallic transport of strongly correlated two-dimensional holes in GaAs quantum wells

Nicholas J. Goble, Case Western Reserve University
John D. Watson, Purdue University, Birck Nanotechnology Center
Michael J. Manfra, Purdue University, Birck Nanotechnology Center
Xuan P.A. Gao, Case Western Reserve University

Date of this Version

7-15-2014

Comments

This is the publisher PDF of Goble, NJ; Watson, JD; Manfra, MJ; and Gao, XPA. "Impact of short-range scattering on the metallic transport of strongly correlated two-dimensional holes in GaAs quantum wells." Physical Review B, 90:3, 0353410. 2014. Copyright APS, available at http://dx.doi.org/10.1103/PhysRevB.90.035310.

Abstract

Understanding the nonmonotonic behavior in the temperature dependent resistance R(T) of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator transitions. We have studied the transport of high mobility 2D holes in 20-nm-wide GaAs quantum wells with varying short-range disorder strength by changing the Al fraction x in the AlxGa1-xAs barrier. Via varying the short-range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range vs long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r(s) similar to 20.

Discipline(s)

Nanoscience and Nanotechnology

 

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