Abstract
Understanding the nonmonotonic behavior in the temperature dependent resistance R(T) of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator transitions. We have studied the transport of high mobility 2D holes in 20-nm-wide GaAs quantum wells with varying short-range disorder strength by changing the Al fraction x in the AlxGa1-xAs barrier. Via varying the short-range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range vs long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r(s) similar to 20.
Keywords
TEMPERATURE-DEPENDENT RESISTANCE, INSULATOR-TRANSITION, ELECTRON-SYSTEMS, 2 DIMENSIONS, CONDUCTIVITY, COLLOQUIUM, BEHAVIOR, GASES
DOI
10.1103/PhysRevB.90.035310
Date of this Version
7-15-2014
Recommended Citation
Goble, Nicholas J.; Watson, John D.; Manfra, Michael J.; and Gao, Xuan P.A., "Impact of short-range scattering on the metallic transport of strongly correlated two-dimensional holes in GaAs quantum wells" (2014). Birck and NCN Publications. Paper 1651.
http://dx.doi.org/10.1103/PhysRevB.90.035310
Comments
This is the publisher PDF of Goble, NJ; Watson, JD; Manfra, MJ; and Gao, XPA. "Impact of short-range scattering on the metallic transport of strongly correlated two-dimensional holes in GaAs quantum wells." Physical Review B, 90:3, 0353410. 2014. Copyright APS, available at http://dx.doi.org/10.1103/PhysRevB.90.035310.