Experimental demonstration of titanium nitride plasmonic interconnects

Author

• Nathaniel Kinsey, Purdue University, Birck Nanotechnology CenterFollow
• Marcello Ferrera, Purdue University, Birck Nanotechnology Center, Heriot Watt UniversityFollow
• Gururaj V. Naik, Purdue University, Birck Nanotechnology Center, Standford UniversityFollow
• V. E. Babicheva, Technical University of Denmark
• Vladimir M. Shalaev, Purdue University, Birck Nanotechnology CenterFollow
• Alexandra Boltasseva, Purdue University, Birck Nanotechnology CenterFollow

Abstract

An insulator-metal-insulator plasmonic interconnect using TiN, a CMOS-compatible material, is proposed and investigated experimentally at the telecommunication wavelength of 1.55 mu m. The TiN waveguide was shown to obtain propagation losses less than 0.8 dB/mm with a mode size of 9.8 mu m on sapphire, which agree well with theoretical predictions. A theoretical analysis of a solid-state structure using Si3N4 superstrates and ultra-thin metal strips shows that propagation losses less than 0.3 dB/mm with a mode size of 9 mu m are attainable. This work illustrates the potential of TiN as a realistic plasmonic material for practical solid-state, integrated nano-optic and hybrid photonic devices. (C) 2014 Optical Society of America

Keywords

POLARITON WAVE-GUIDES, TELECOMMUNICATION WAVELENGTHS, DIELECTRIC FUNCTION, POLYMER, PROPAGATION, EXCITATION, DEPOSITION, COMPONENTS, MODULATOR, SILVER

DOI

10.1364/OE.22.012238

Date of this Version

5-19-2014

Recommended Citation

Kinsey, Nathaniel; Ferrera, Marcello; Naik, Gururaj V.; Babicheva, V. E.; Shalaev, Vladimir M.; and Boltasseva, Alexandra, "Experimental demonstration of titanium nitride plasmonic interconnects" (2014). Birck and NCN Publications. Paper 1630.
http://dx.doi.org/10.1364/OE.22.012238