Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

Author

• Sunkook Kim, Purdue University - Main CampusFollow
• Yi Xuan, Purdue UniversityFollow
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue UniversityFollow
• J H. Back, Department of Materials Science and Engineering, University of Illinois
• Moonsub Shim, Department of Materials Science and Engineering, University of Illinois

Abstract

High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 mu m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10(-11) A at -2.5 V

Date of this Version

April 2007

Recommended Citation

Kim, Sunkook; Xuan, Yi; Ye, P. D.; Mohammadi, Saeed; Back, J H.; and Shim, Moonsub, "Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors" (2007). Birck and NCN Publications. Paper 160.
https://docs.lib.purdue.edu/nanopub/160