Abstract
Using scanning tunneling microscopy and ab initio simulations, we have identified several configurations for Cu dopants in CuxBi2Se3, with Cu intercalants being the most abundant. Through statistical analysis, we show strong short-range repulsive interactions between Cu intercalants. At intermediate range (>5 nm), the pair distribution function shows oscillatory structure along the < 10 (1) over bar > directions, which appear to be influenced by different diffusion barriers along the < 10 (1) over bar > and < 2 (1) over bar(1) over bar > directions.
Keywords
DOPED TOPOLOGICAL INSULATOR, SEMICONDUCTORS, BI2SE3, SURFACE, IMPURITIES, DEFECTS, MICROSCOPE, SCATTERING, TRANSPORT, ADATOMS
Citation
10.1103/PhysRevB.89.155312
Date of this Version
4-17-2014
Recommended Citation
Mann, Chris; West, Damien; Miotkowski, Ireneusz; Chen, Yong P.; Zhang, Shengbai; and Shih, Chih-Kang, "Observation of Coulomb repulsion between Cu intercalants in CuxBi2Se3" (2014). Birck and NCN Publications. Paper 1588.
https://docs.lib.purdue.edu/nanopub/1588
Comments
This is the Publisher PDF of Mann, C; West, D; Miotkowski, I; Chen, YP; Zhang, S; and Shih, C-K. "Observation of Coulomb repulsion between Cu intercalants in CUxBi2Se3." Physical Review B, 89: 155312. 2014. Copyright APS, available at http://dx.doi.org/10.1103/PhysRevB.89.155312.