GaMnAs-based hybrid multiferroic memory device

Author

• Mason Overby, Purdue UniversityFollow
• Alexander Chernyshov, Purdue UniversityFollow
• Leonid P. Rokhinson, Birck Nanotechnology Center, Purdue UniversityFollow
• X Liu, Department of Physics, University of Notre Dame
• J K. Furdyna, Department of Physics, University of Notre Dame

Abstract

We report a nonvolatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.

Citation

APPLIED PHYSICS LETTERS 92, 192501

Date of this Version

May 2008

Recommended Citation

Overby, Mason; Chernyshov, Alexander; Rokhinson, Leonid P.; Liu, X; and Furdyna, J K., "GaMnAs-based hybrid multiferroic memory device" (2008). Birck and NCN Publications. Paper 157.
https://docs.lib.purdue.edu/nanopub/157