Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Author

• Nathan Conrad, Purdue UniversityFollow
• SangHong Shin
• Jiangjiang Gu, Purdue University, Birck Nanotechnology CenterFollow
• Mengwei Si, Purdue UniversityFollow
• Heng Wu, Purdue UniversityFollow
• Muhammad Masuduzzaman, Purdue UniversityFollow
• Muhammad A. Alam, Purdue UniversityFollow
• Peide D. Ye, Purdue University, Birck Nanotechnology CenterFollow

Abstract

Furthering Si CMOS scaling requires development of high-mobility channel materials and advanced device structures to improve the electrostatic control. We demonstrate the fabrication of gate-all-around (GAA) indium gallium arsenide (InGaAs) MOSFETs with highly scaled atomic-layer-deposited gate dielectrics. InGaAs, with its high electron mobility, allows higher drive currents and other on-state performance compared to silicon. The GAA structure provides superior electrostatic control of the MOSFET channel with outstanding off-state performance. A subthreshold slope of 72 mV/dec, electron mobility of 764 cm(2)/V . s, and an on-current of 1.59 mA/mu m are demonstrated, for example. Variability studies on on-state and off-state performances caused by the number of nanowire channels are also presented.

Keywords

Gate-all-around, InGaAs, MOSFET, nanowire, TRANSISTORS, NOISE, SI

DOI

10.1109/TDMR.2013.2283854

Date of this Version

12-2013

Recommended Citation

Conrad, Nathan; Shin, SangHong; Gu, Jiangjiang; Si, Mengwei; Wu, Heng; Masuduzzaman, Muhammad; Alam, Muhammad A.; and Ye, Peide D., "Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs" (2013). Birck and NCN Publications. Paper 1552.
http://dx.doi.org/10.1109/TDMR.2013.2283854