High performance In2O3 nanowire transistors using organic gate nanodielectrics

Author

• Sanghyun Ju, Department of Physics, Kyonggi University
• Fumiaki Ishikawa, Department of Electrical Engineering, University of Southern California
• Pochiang Chen, Department of Electrical Engineering, University of Southern California
• Hsiao-Kang Chang, Department of Electrical Engineering, University of Southern California
• Chongwu Zhou, Department of Electrical Engineering, University of Southern California
• Young-geun Ha, Department of Chemistry and the Materials Research Center, and the Institute for Nanoelectronics and Computing, Northwestern University
• Jun Liu, Department of Chemistry and the Materials Research Center, and the Institute for Nanoelectronics and Computing, Northwestern University
• Antonio Facchetti, Northwestern University
• Tobin J. Marks, Northwestern University
• David B. Janes, Purdue UniversityFollow

Abstract

We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n-type transistor characteristics with an on-current of similar to 25 mu A for a single In2O3 nanowire at 2.0V(ds), 2.1V(gs), a subthreshold slope of 0.2 V/decade, an on-off current ratio of 10(6), and a field-effect mobility of similar to 1450 cm(2)/V s. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies.

Citation

APPLIED PHYSICS LETTERS 92, 222105

Date of this Version

June 2008

Recommended Citation

Ju, Sanghyun; Ishikawa, Fumiaki; Chen, Pochiang; Chang, Hsiao-Kang; Zhou, Chongwu; Ha, Young-geun; Liu, Jun; Facchetti, Antonio; Marks, Tobin J.; and Janes, David B., "High performance In2O3 nanowire transistors using organic gate nanodielectrics" (2008). Birck and NCN Publications. Paper 155.
https://docs.lib.purdue.edu/nanopub/155