Efficient and realistic device modeling from atomic detail to the nanoscale

Author

• James E. Fonseca, Network for Computational Nanotechnology, Purdue UniversityFollow
• Tillmann C. Kubis, Network for Computational Nanotechnology, Purdue UniversityFollow
• Michael Povolotskyi, Network for Computational Nanotechnology, Purdue UniversityFollow
• Bozidar Novakovic, Network for Computational Nanotechnology, Purdue UniversityFollow
• Arvind Ajoy, Network for Computational Nanotechnology, Purdue University
• Ganesh K. Hegde, Network for Computational Nanotechnology, Purdue UniversityFollow
• Hesameddin Ilatikhameneh, Network for Computational Nanotechnology, Purdue UniversityFollow
• Zhengping Jiang, Network for Computational Nanotechnology, Purdue UniversityFollow
• Parijat Sengupta, Network for Computational Nanotechnology, Purdue UniversityFollow
• Yui-Hong Tan, Network for Computational Nanotechnology, Purdue UniversityFollow
• Gerhard Klimeck, Network for Computational Nanotechnology, Purdue UniversityFollow

Abstract

As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena. This article seeks to provide updates on the current status of the tool and new functionality, including advances in quantum transport simulations and with materials such as metals, topological insulators, and piezoelectrics.

Keywords

Nanoelectronics, Greens function formalism (NEGF), NEMO, Tight-binding, Quantum dot, Strain, Transport and phonons, Poisson, Parallel computing, QUANTUM TRANSPORT, NEMO 3-D, SIMULATION, TRANSISTOR, APPROXIMATION, ELECTRON, SINGLE, STRAIN

DOI

10.1007/s10825-013-0509-0

Date of this Version

12-2013

Recommended Citation

Fonseca, James E.; Kubis, Tillmann C.; Povolotskyi, Michael; Novakovic, Bozidar; Ajoy, Arvind; Hegde, Ganesh K.; Ilatikhameneh, Hesameddin; Jiang, Zhengping; Sengupta, Parijat; Tan, Yui-Hong; and Klimeck, Gerhard, "Efficient and realistic device modeling from atomic detail to the nanoscale" (2013). Birck and NCN Publications. Paper 1549.
http://dx.doi.org/10.1007/s10825-013-0509-0