1/f noise of SnO2 nanowire transistors

Author

• Sanghyun Ju, Kyonggi Univ, Dept Phys
• Pochiang Chen, University of Southern Calif
• Chongwu Zhou, University of Southern Calif
• Young-geun Ha, Northwestern University
• Antonio Facchetti, Northwestern University
• Tobin J. Marks, Northwestern University
• Sunkook Kim, Purdue University - Main CampusFollow
• Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue UniversityFollow
• David B. Janes, Purdue UniversityFollow

Abstract

The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to be proportional to I-d(2) in the transistor operating regime. The extracted Hooge's constants (alpha(H)) are 4.5x10(-2) at V-ds=0.1 V and 5.1x10(-2) at V-ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

Citation

APPLIED PHYSICS LETTERS 92, 243120

Date of this Version

June 2008

Recommended Citation

Ju, Sanghyun; Chen, Pochiang; Zhou, Chongwu; Ha, Young-geun; Facchetti, Antonio; Marks, Tobin J.; Kim, Sunkook; Mohammadi, Saeed; and Janes, David B., "1/f noise of SnO2 nanowire transistors" (2008). Birck and NCN Publications. Paper 153.
https://docs.lib.purdue.edu/nanopub/153