1/f noise of SnO2 nanowire transistors

Sanghyun Ju, Kyonggi Univ, Dept Phys
Pochiang Chen, University of Southern Calif
Chongwu Zhou, University of Southern Calif
Young-geun Ha, Northwestern University
Antonio Facchetti, Northwestern University
Tobin J. Marks, Northwestern University
Sunkook Kim, Purdue University - Main Campus
Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue University
David B. Janes, Purdue University

Abstract

The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to be proportional to I-d(2) in the transistor operating regime. The extracted Hooge's constants (alpha(H)) are 4.5x10(-2) at V-ds=0.1 V and 5.1x10(-2) at V-ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.