Abstract
We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition. By controlling the intensity and polarization direction of the incident radiation, multiple parallel nanowires can be simultaneously synthesized. The nanowires are produced on a dielectric substrate with controlled diameter, length, orientation, and the possibility of in-situ doping, and therefore are ready for device fabrication. Our method offers rapid one-step fabrication of nano-materials and devices unobtainable with previous CVD methods.
Keywords
CHEMICAL-VAPOR-DEPOSITION, GROWTH, LITHOGRAPHY, NANOLITHOGRAPHY, FABRICATION
DOI
10.1038/srep03908
Date of this Version
1-28-2014
Recommended Citation
Mitchell, James I.; Zhou, Nan; Nam, Woongsik; Traverso, Luis M.; and Xu, Xianfan, "Sub-diffraction Laser Synthesis of Silicon Nanowires" (2014). Birck and NCN Publications. Paper 1525.
http://dx.doi.org/10.1038/srep03908
Comments
This is the publisher PDF of Mitchell, JI; Zhou, N; Nam, W; Traverso, LM; and Xu, X. "Sub-diffraction Laser Synthesis of Silicon Nanowires." Scientific Reports. 4, Article number 3908. 2014. Published by Nature Publishing Group, it is made available here with a CC-BY license and is available at http://dx.doi.org/10.1038/srep03908.