Sub-diffraction Laser Synthesis of Silicon Nanowires

James I. Mitchell, Purdue University, Birck Nanotechnology Center
Nan Zhou, Purdue University, Birck Nanotechnology Center
Woongsik Nam, Purdue University, Birck Nanotechnology Center
Luis M. Traverso, Purdue University, Birck Nanotechnology Center
Xianfan Xu, Purdue University, Birck Nanotechnology Center

Date of this Version

1-28-2014

Comments

This is the publisher PDF of Mitchell, JI; Zhou, N; Nam, W; Traverso, LM; and Xu, X. "Sub-diffraction Laser Synthesis of Silicon Nanowires." Scientific Reports. 4, Article number 3908. 2014. Published by Nature Publishing Group, it is made available here with a CC-BY license and is available at http://dx.doi.org/10.1038/srep03908.

Abstract

We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition. By controlling the intensity and polarization direction of the incident radiation, multiple parallel nanowires can be simultaneously synthesized. The nanowires are produced on a dielectric substrate with controlled diameter, length, orientation, and the possibility of in-situ doping, and therefore are ready for device fabrication. Our method offers rapid one-step fabrication of nano-materials and devices unobtainable with previous CVD methods.

Discipline(s)

Nanoscience and Nanotechnology

 

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