Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Abstract
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors and its potential applications in layer-structured semiconducting 2-D crystals.
Keywords
Contact resistance; doping; MoS2; MOSFET; sheet resistance; threshold voltage; METAL DICHALCOGENIDE NANOSHEETS; MONOLAYER MOS2; GRAPHENE; TRANSITION; CARBON; DEVICES; CELLS; FILMS; HOLE
DOI
10.1109/LED.2013.2277311
Date of this Version
10-2013
Recommended Citation
Du, Yuchen; Liu, Han; Neal, Adam T.; Si, Mengwei; and Ye, Peide D., "Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances" (2013). Birck and NCN Publications. Paper 1470.
http://dx.doi.org/10.1109/LED.2013.2277311