Magneto-transport in MoS2: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor
Abstract
We have characterized phase coherence length, spin-orbit scattering length, and the Hall factor in n-type MoS2 2D crystals Via Weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of similar to 50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin-orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low-temperature Hall mobility of 311 cm(2)/(V s) at T = 1 K, which decreases as a power law with a characteristic exponent gamma = 1.5 from 10 to 60 K. At room temperature, we observe Hall mobility of 24 cm(2)/(V s). By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 and 56 cm(2)/(V s) at T = 1 K and room temperature, respectively.
Keywords
MoS2; transition metal dichalcogenide; weak localization; phase coherence length; spin-orbit scattering length; Hall effect; mobility; Hall factor; VALLEY IMPURITY SCATTERING; MONOLAYER MOS2; TRANSISTORS; MAGNETORESISTANCE; POLARIZATION; MOBILITY
DOI
10.1021/nn402377g
Date of this Version
8-2013
Recommended Citation
Neal, Adam T.; Liu, Han; Gu, Jiangjiang; and Ye, Peide D., "Magneto-transport in MoS2: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor" (2013). Birck and NCN Publications. Paper 1448.
http://dx.doi.org/10.1021/nn402377g