Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates

Author

• Mark H. Oliver, Purdue UniversityFollow
• Jeremy L. Schroeder, Birck Nanotechnology Center, Purdue UniversityFollow
• David Ewoldt, Birck Nanotechnology Center, Purdue UniversityFollow
• Isaac Wildeson, Purdue Univ, Sch Elect & Comp EngnFollow
• vijay rawat, Purdue UniversityFollow
• Robert Colby, Purdue UniversityFollow
• Patrick R. Cantwell, Purdue UniversityFollow
• E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue UniversityFollow
• Timothy D. Sands, Purdue UniversityFollow

Abstract

An intermediate ZrN/AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of similar to 1000 degrees C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1 mu m thick grown on ZrN/AlN/Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230 arc sec.

Keywords

LAYER, CONTACTS

Citation

APPLIED PHYSICS LETTERS 93, 023109

Date of this Version

July 2008

Recommended Citation

Oliver, Mark H.; Schroeder, Jeremy L.; Ewoldt, David; Wildeson, Isaac; rawat, vijay; Colby, Robert; Cantwell, Patrick R.; Stach, E A.; and Sands, Timothy D., "Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates" (2008). Birck and NCN Publications. Paper 143.
https://docs.lib.purdue.edu/nanopub/143