Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures

Author

• D. Li, Birck Nanotechnology Center, Purdue University
• J. Shao, Birck Nanotechnology Center, Purdue University
• L. Tang, Birck Nanotechnology Center, Purdue University
• Geoff C. Gardner, Birck Nanotechnology Center, Purdue UniversityFollow
• Michael J. Manfra, Birck Nanotechnology Center, Purdue UniversityFollow
• O. Malis, Birck Nanotechnology Center, Purdue UniversityFollow
• C. Edmunds, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current-voltage (I-V) characterization was done in the 6-300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 x 4 mu m(2) at temperatures below 130 K. This suggests that the resonant tunneling is the dominant charge transport mechanism in our devices.

Keywords

MOLECULAR-BEAM EPITAXY; INTERSUBBAND ABSORPTION; QUANTUM-WELLS; DIODES; TRANSPORT; NANOWIRES; GAN

DOI

10.1088/0268-1242/28/7/074024

Date of this Version

7-2013

Recommended Citation

Li, D.; Shao, J.; Tang, L.; Gardner, Geoff C.; Manfra, Michael J.; Malis, O.; and Edmunds, C., "Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures" (2013). Birck and NCN Publications. Paper 1421.
http://dx.doi.org/10.1088/0268-1242/28/7/074024