Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate-Source-Drain Electrodes

Jihye Bong, Kyonggi University
Junebeom Han, Kyonggi University
Jonghun Lee, Kyonggi University
Seongmin Kim, Birck Nanotechnology Center, Purdue University
Sanghyun Ju, Kyonggi University

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We report the fabrication of a highly transparent nanowire transistor using graphene as the gate and source-drain electrodes. Graphene gate-source-drain electrodes were simultaneously formed by a single-step transfer process. The graphene electrode and the nanowire channel exhibited near-ohmic contact characteristics. The threshold voltage, subthreshold slope, and mobility of the fabricated top-gate-structural In2O3 nanowire transistor with graphene gate-source-drain electrodes were -4.54 V, 0.43 V/dec, and 78 cm(2)/(V.s) respectively. The optical transmissions in the region that contained nanowire transistors on the quartz substrate were 88.5-90.3% in the 400-780nm wavelength range. (C) 2013 The Japan Society of Applied Physics


Nanoscience and Nanotechnology