Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate-Source-Drain Electrodes
Abstract
We report the fabrication of a highly transparent nanowire transistor using graphene as the gate and source-drain electrodes. Graphene gate-source-drain electrodes were simultaneously formed by a single-step transfer process. The graphene electrode and the nanowire channel exhibited near-ohmic contact characteristics. The threshold voltage, subthreshold slope, and mobility of the fabricated top-gate-structural In2O3 nanowire transistor with graphene gate-source-drain electrodes were -4.54 V, 0.43 V/dec, and 78 cm(2)/(V.s) respectively. The optical transmissions in the region that contained nanowire transistors on the quartz substrate were 88.5-90.3% in the 400-780nm wavelength range. (C) 2013 The Japan Society of Applied Physics
Keywords
FIELD-EFFECT TRANSISTORS; IN2O3 NANOWIRES; SURFACE; FILMS
DOI
10.7567/APEX.6.055103
Date of this Version
5-2013
Recommended Citation
Bong, Jihye; Han, Junebeom; Lee, Jonghun; Kim, Seongmin; and Ju, Sanghyun, "Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate-Source-Drain Electrodes" (2013). Birck and NCN Publications. Paper 1402.
http://dx.doi.org/10.7567/APEX.6.055103