Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs

Author

• TOMOHIRO TAMAKI, PURDUE UNIVERSITYFollow
• Ginger G. Walden, Birck Nanotechnology Center, Purdue UniversityFollow
• Yang Sui, Purdue UniversityFollow
• James A. Cooper, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunchthrough buffer layer is found to be the major factor determining switching

Comments

Article available at: http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4578887

Date of this Version

8-1-2008

Recommended Citation

TAMAKI, TOMOHIRO; Walden, Ginger G.; Sui, Yang; and Cooper, James A., "Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs" (2008). Birck and NCN Publications. Paper 139.
https://docs.lib.purdue.edu/nanopub/139