Synthetic graphene grown by chemical vapor deposition on copper foils

Author

• Ting Fung Chung, Birck Nanotechnology Center, Purdue UniversityFollow
• Tian Shen, Purdue University
• Helin Cao, Birck Nanotechnology Center, Purdue UniversityFollow
• Luis A. Jauregui, Birck Nanotechnology Center, Purdue UniversityFollow
• Wei Wu, University of Houston
• Qingkai Yu, Texas State University - San Marcos
• David Newell, National Institute of Standards & Technology (NIST)
• Yong P. Chen, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

Keywords

CVD graphene; atmospheric pressure CVD growth; copper foil; Raman scattering; electronic transport; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; BILAYER GRAPHENE; GRAIN-BOUNDARIES; LAYER GRAPHENE; SINGLE-LAYER; FILMS; SEGREGATION; PHOTODIODES; TRANSPORT

DOI

10.1142/S0217979213410026

Date of this Version

4-20-2013

Recommended Citation

Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; and Chen, Yong P., "Synthetic graphene grown by chemical vapor deposition on copper foils" (2013). Birck and NCN Publications. Paper 1389.
http://dx.doi.org/10.1142/S0217979213410026